Sunday, 1 November 2026
Standing Office 81 (SOVNPA 81) emblem Viet Nam NVietnam National Presiding Agency
on Countering the Proliferation of Weapons of Mass Destruction
Standing Office 81

3.C.1.Hetero-epitaxial materials consisting of a "substrate" having stacked epitaxially grown multiple layers of any of the following:

List
Wassenaar Arrangement – List of Dual-Use Goods and Technologies – WA-LIST (25) 1
Corresponding EU entry
3C001
a. Silicon (Si);
b. Germanium (Ge);
c. Silicon Carbide (SiC);
d. "III/V compounds" of gallium or indium;
Note 3.C.1.d. does not apply to a "substrate" having one or more P-type epitaxial layers of GaN, InGaN, AlGaN, InAlN, InAlGaN, GaP, GaAs, AlGaAs, InP, InGaP, AlInP or InGaAlP, independent of the sequence of the elements, except if the P-type epitaxial layer is between N-type layers.
e. Gallium Oxide (Ga₂O₃); or
f. Diamond.