- List
- Wassenaar Arrangement – List of Dual-Use Goods and Technologies – WA-LIST (25) 1
- Corresponding EU entry
- 2B005
a. Chemical Vapour Deposition (CVD) production equipment having all of the following:
1. A process modified for one of the following:
a. Pulsating CVD;
b. Controlled Nucleation Thermal Deposition (CNTD); or
c. Plasma enhanced or plasma assisted CVD; and
2. Having any of the following:
a. Incorporating high vacuum (equal to or less than 0.01 Pa) rotating seals; or
b. Incorporating in situ coating thickness control;
b. Ion implantation production equipment having beam currents of 5 mA or more;
c. Electron Beam-Physical Vapour Deposition (EB-PVD) production equipment incorporating power systems rated for over 80 kW and having any of the following:
1. A liquid pool level "laser" control system which regulates precisely the ingots feed rate; or
2. A computer controlled rate monitor operating on the principle of photo-luminescence of the ionised atoms in the evaporant stream to control the deposition rate of a coating containing two or more elements;
d. Plasma spraying production equipment having any of the following:
1. Operating at reduced pressure controlled atmosphere (equal to or less than 10 kPa measured above and within 300 mm of the gun nozzle exit) in a vacuum chamber capable of evacuation down to 0.01 Pa prior to the spraying process; or
2. Incorporating in situ coating thickness control;
e. Sputter deposition production equipment capable of current densities of 0.1 mA/mm² or higher at a deposition rate of 15 µm/h or more;
f. Cathodic arc deposition production equipment incorporating a grid of electromagnets for steering control of the arc spot on the cathode;
g. Ion plating production equipment capable of in situ measurement of any of the following:
1. Coating thickness on the substrate and rate control; or
2. Optical characteristics.
Note 2.B.5.a., 2.B.5.b., 2.B.5.e., 2.B.5.f. and 2.B.5.g. do not apply to Chemical Vapour Deposition (CVD), cathodic arc, sputter deposition, ion plating or ion implantation equipment, specially designed for cutting or machining tools.
1. A process modified for one of the following:
a. Pulsating CVD;
b. Controlled Nucleation Thermal Deposition (CNTD); or
c. Plasma enhanced or plasma assisted CVD; and
2. Having any of the following:
a. Incorporating high vacuum (equal to or less than 0.01 Pa) rotating seals; or
b. Incorporating in situ coating thickness control;
b. Ion implantation production equipment having beam currents of 5 mA or more;
c. Electron Beam-Physical Vapour Deposition (EB-PVD) production equipment incorporating power systems rated for over 80 kW and having any of the following:
1. A liquid pool level "laser" control system which regulates precisely the ingots feed rate; or
2. A computer controlled rate monitor operating on the principle of photo-luminescence of the ionised atoms in the evaporant stream to control the deposition rate of a coating containing two or more elements;
d. Plasma spraying production equipment having any of the following:
1. Operating at reduced pressure controlled atmosphere (equal to or less than 10 kPa measured above and within 300 mm of the gun nozzle exit) in a vacuum chamber capable of evacuation down to 0.01 Pa prior to the spraying process; or
2. Incorporating in situ coating thickness control;
e. Sputter deposition production equipment capable of current densities of 0.1 mA/mm² or higher at a deposition rate of 15 µm/h or more;
f. Cathodic arc deposition production equipment incorporating a grid of electromagnets for steering control of the arc spot on the cathode;
g. Ion plating production equipment capable of in situ measurement of any of the following:
1. Coating thickness on the substrate and rate control; or
2. Optical characteristics.
Note 2.B.5.a., 2.B.5.b., 2.B.5.e., 2.B.5.f. and 2.B.5.g. do not apply to Chemical Vapour Deposition (CVD), cathodic arc, sputter deposition, ion plating or ion implantation equipment, specially designed for cutting or machining tools.