- List
- EU dual-use list – Annex I to Regulation (EU) 2021/821, updated annually
- Originating regime
- Thỏa ước Wassenaar
a. Chemical vapour deposition (CVD) production equipment having all of the following:
N.B. SEE ALSO 2B105.
1. A process modified for one of the following:
a. Pulsating CVD;
b. Controlled nucleation thermal deposition (CNTD); or
c. Plasma enhanced or plasma assisted CVD; and
2. Having any of the following:
a. Incorporating high vacuum (equal to or less than 0,01 Pa) rotating seals; or
b. Incorporating in situ coating thickness control;
b. Ion implantation production equipment having beam currents of 5 mA or more;
c. Electron beam physical vapour deposition (EB-PVD) production equipment incorporating power systems rated for over 80 kW and having any of the following:
1. A liquid pool level "laser" control system which regulates precisely the ingots feed rate; or
2. A computer controlled rate monitor operating on the principle of photo-luminescence of the ionised atoms in the evaporant stream to control the deposition rate of a coating containing two or more elements;
d. Plasma spraying production equipment having any of the following:
1. Operating at reduced pressure controlled atmosphere (equal to or less than 10 kPa measured above and within 300 mm of the gun nozzle exit) in a vacuum chamber capable of evacuation down to 0,01 Pa prior to the spraying process; or
2. Incorporating in situ coating thickness control;
e. Sputter deposition production equipment capable of current densities of 0,1 mA/mm2 or higher at a deposition rate of 15 μm/h or more;
f. Cathodic arc deposition production equipment incorporating a grid of electromagnets for steering control of the arc spot on the cathode;
g. Ion plating production equipment capable of the in situ measurement of any of the following:
1. Coating thickness on the substrate and rate control; or
2. Optical characteristics.
Note:
2B005 does not control chemical vapour deposition, cathodic arc, sputter deposition, ion plating or ion implantation equipment, specially designed for cutting or machining tools.
N.B. SEE ALSO 2B105.
1. A process modified for one of the following:
a. Pulsating CVD;
b. Controlled nucleation thermal deposition (CNTD); or
c. Plasma enhanced or plasma assisted CVD; and
2. Having any of the following:
a. Incorporating high vacuum (equal to or less than 0,01 Pa) rotating seals; or
b. Incorporating in situ coating thickness control;
b. Ion implantation production equipment having beam currents of 5 mA or more;
c. Electron beam physical vapour deposition (EB-PVD) production equipment incorporating power systems rated for over 80 kW and having any of the following:
1. A liquid pool level "laser" control system which regulates precisely the ingots feed rate; or
2. A computer controlled rate monitor operating on the principle of photo-luminescence of the ionised atoms in the evaporant stream to control the deposition rate of a coating containing two or more elements;
d. Plasma spraying production equipment having any of the following:
1. Operating at reduced pressure controlled atmosphere (equal to or less than 10 kPa measured above and within 300 mm of the gun nozzle exit) in a vacuum chamber capable of evacuation down to 0,01 Pa prior to the spraying process; or
2. Incorporating in situ coating thickness control;
e. Sputter deposition production equipment capable of current densities of 0,1 mA/mm2 or higher at a deposition rate of 15 μm/h or more;
f. Cathodic arc deposition production equipment incorporating a grid of electromagnets for steering control of the arc spot on the cathode;
g. Ion plating production equipment capable of the in situ measurement of any of the following:
1. Coating thickness on the substrate and rate control; or
2. Optical characteristics.
Note:
2B005 does not control chemical vapour deposition, cathodic arc, sputter deposition, ion plating or ion implantation equipment, specially designed for cutting or machining tools.