- List
- EU dual-use list – Annex I to Regulation (EU) 2021/821, updated annually
- Originating regime
- Thỏa ước Wassenaar
a. Vacuum microelectronic devices;
b. Hetero-structure semiconductor electronic devices such as High Electron Mobility Transistors (HEMTs), Heterojunction Bipolar Transistors (HBTs), quantum well and super lattice devices;
Note:
3E003.b. does not control "technology" for HEMTs operating at frequencies lower than 31,8 GHz and HBTs operating at frequencies lower than 31,8 GHz.
c. "Superconductive" electronic devices;
d. Substrates of diamond for electronic components;
e. Substrates of silicon-on-insulator (SOI) for integrated circuits in which the insulator is silicon dioxide;
f. Substrates of silicon carbide for electronic components;
g. "Vacuum electronic devices" operating at frequencies of 31,8 GHz or higher;
h. Substrates of gallium oxide for electronic components.
b. Hetero-structure semiconductor electronic devices such as High Electron Mobility Transistors (HEMTs), Heterojunction Bipolar Transistors (HBTs), quantum well and super lattice devices;
Note:
3E003.b. does not control "technology" for HEMTs operating at frequencies lower than 31,8 GHz and HBTs operating at frequencies lower than 31,8 GHz.
c. "Superconductive" electronic devices;
d. Substrates of diamond for electronic components;
e. Substrates of silicon-on-insulator (SOI) for integrated circuits in which the insulator is silicon dioxide;
f. Substrates of silicon carbide for electronic components;
g. "Vacuum electronic devices" operating at frequencies of 31,8 GHz or higher;
h. Substrates of gallium oxide for electronic components.