Sunday, 1 November 2026
Sign in
VI EN
Standing Office 81 (SOVNPA 81) emblem Viet Nam NVietnam National Presiding Agency
on Countering the Proliferation of Weapons of Mass Destruction Standing Office 81
Notices

Targeted financial sanctions obligations and designated lists relating to the proliferation of weapons of mass destruction and proliferation financing

Notices

30 October 2026UN Security Council updates the sanctions list (30/10/2026)

3.C.5.High resistivity materials as follows:

List
Wassenaar Arrangement – List of Dual-Use Goods and Technologies – WA-LIST (25) 1
Corresponding EU entry
3C005
a. Silicon carbide (SiC), gallium nitride (GaN), aluminium nitride (AlN), aluminium gallium nitride (AlGaN), gallium oxide (Ga₂O₃) or diamond semiconductor "substrates", or ingots, boules, or other preforms of those materials, having resistivities greater than 10,000 ohm-cm at 20°C;
b. Polycrystalline "substrates" or polycrystalline ceramic "substrates", having resistivities greater than 10,000 ohm-cm at 20°C and having at least one non-epitaxial single-crystal layer of silicon (Si), silicon carbide (SiC), gallium nitride (GaN), aluminium nitride (AlN), aluminium gallium nitride (AlGaN), gallium oxide (Ga₂O₃) or diamond on the surface of the "substrate".
N.B. For materials consisting of a "substrate" specified in 3.C.5. with at least one epitaxial layer, see 3.C.1. or 3.C.6.