- List
- Wassenaar Arrangement – List of Dual-Use Goods and Technologies – WA-LIST (25) 1
- Corresponding EU entry
- 3B001
a. Equipment designed for epitaxial growth as follows:
1. Equipment designed or modified to produce a layer of any material other than silicon with a thickness uniform to less than ± 2.5% across a distance of 75 mm or more;
Note 3.B.1.a.1. includes Atomic Layer Epitaxy (ALE) equipment.
2. Metal Organic Chemical Vapour Deposition (MOCVD) reactors designed for compound semiconductor epitaxial growth of material having two or more of the following elements: aluminium, gallium, indium, arsenic, phosphorus, antimony, oxygen, or nitrogen;
3. Molecular beam epitaxial growth equipment using gas or solid sources;
b. Equipment designed for ion implantation and having any of the following:
1. Not used since 2012
2. Being designed and optimized to operate at a beam energy of 20 keV or more and a beam current of 10 mA or more for hydrogen, deuterium or helium implant;
3. Direct write capability;
4. A beam energy of 65 keV or more and a beam current of 45 mA or more for high energy oxygen implant into a heated semiconductor material "substrate"; or
5. Being designed and optimized to operate at a beam energy of 20 keV or more and a beam current of 10 mA or more for silicon implant into a semiconductor material "substrate" heated to 600°C or greater;
c. Not used since 2015
d. Not used since 2011
e. Automatic loading multi-chamber central wafer handling systems having all of the following:
1. Interfaces for wafer input and output, to which more than two functionally different 'semiconductor process tools' specified in 3.B.1.a.1., 3.B.1.a.2., 3.B.1.a.3. or 3.B.1.b. are designed to be connected; and
2. Designed to form an integrated system in a vacuum environment for 'sequential multiple wafer processing';
Note 3.B.1.e. does not apply to automatic robotic wafer handling systems specially designed for parallel wafer processing.
Technical Notes
1. For the purposes of 3.B.1.e.1., 'semiconductor process tools' refers to modular tools that provide physical processes for semiconductor "production" that are functionally different, such as deposition, implant or thermal processing.
2. For the purposes of 3.B.1.e.2., 'sequential multiple wafer processing' means the capability to process each wafer in different 'semiconductor process tools', such as by transferring each wafer from one tool to a second tool and on to a third tool with the automatic loading multi-chamber central wafer handling systems.
f. Lithography equipment as follows:
1. Align and expose step and repeat (direct step on wafer) or step and scan (scanner) equipment for wafer processing using photo-optical or X-ray methods and having any of the following:
a. A light source wavelength shorter than 193 nm; or
b. Capable of producing a pattern with a 'Minimum Resolvable Feature size' (MRF) of 45 nm or less;
Technical Note
For the purposes of 3.B.1.f.1.b., the 'Minimum Resolvable Feature size' (MRF) is calculated by the following formula:
--------- -------------------------------------------------------------
MRF = (an exposure light source wavelength in nm) x (K factor)
numerical aperture
--------- -------------------------------------------------------------
where the K factor = 0.35.
f. 2. Imprint lithography equipment capable of producing features of 45 nm or less;
Note 3.B.1.f.2. includes:
- Micro contact printing tools;
- Hot embossing tools;
- Nano-imprint lithography tools;
- Step and Flash Imprint Lithography (S-FIL) tools.
f. 3. Equipment specially designed for mask making having all of the following:
a. A deflected focused electron beam, ion beam or "laser" beam; and
b. Having any of the following:
1. A Full-Width Half-Maximum (FWHM) spot size smaller than 65 nm and an image placement less than 17 nm (mean + 3 sigma); or
2. Not used since 2015
3. A second-layer overlay error of less than 23 nm (mean + 3 sigma) on the mask;
f. 4. Equipment designed for device processing using direct writing methods, having all of the following:
a. A deflected focused electron beam; and
b. Having any of the following:
1. A minimum beam size equal to or smaller than 15 nm; or
2. An overlay error less than 27 nm (mean + 3 sigma);
g. Masks and reticles, designed for integrated circuits specified in 3.A.1.;
h. Multi-layer masks with a phase shift layer not specified in 3.B.1.g. and designed to be used by lithography equipment having a light source wavelength less than 245 nm;
Note 3.B.1.h. does not apply to multi-layer masks with a phase shift layer designed for the fabrication of memory devices not specified in 3.A.1.
N.B. For masks and reticles, specially designed for optical sensors, see 6.B.2.
i. Imprint lithography templates designed for integrated circuits specified in 3.A.1.;
j. Mask "substrate blanks" with multilayer reflector structure consisting of molybdenum and silicon, and having all of the following:
1. Specially designed for 'Extreme Ultraviolet' ('EUV') lithography; and
2. Compliant with SEMI Standard P37.
Technical Note
For the purposes of 3.B.1.j., 'Extreme Ultraviolet' ('EUV') refers to electromagnetic spectrum wavelengths greater than 5 nm and less than 124 nm.
1. Equipment designed or modified to produce a layer of any material other than silicon with a thickness uniform to less than ± 2.5% across a distance of 75 mm or more;
Note 3.B.1.a.1. includes Atomic Layer Epitaxy (ALE) equipment.
2. Metal Organic Chemical Vapour Deposition (MOCVD) reactors designed for compound semiconductor epitaxial growth of material having two or more of the following elements: aluminium, gallium, indium, arsenic, phosphorus, antimony, oxygen, or nitrogen;
3. Molecular beam epitaxial growth equipment using gas or solid sources;
b. Equipment designed for ion implantation and having any of the following:
1. Not used since 2012
2. Being designed and optimized to operate at a beam energy of 20 keV or more and a beam current of 10 mA or more for hydrogen, deuterium or helium implant;
3. Direct write capability;
4. A beam energy of 65 keV or more and a beam current of 45 mA or more for high energy oxygen implant into a heated semiconductor material "substrate"; or
5. Being designed and optimized to operate at a beam energy of 20 keV or more and a beam current of 10 mA or more for silicon implant into a semiconductor material "substrate" heated to 600°C or greater;
c. Not used since 2015
d. Not used since 2011
e. Automatic loading multi-chamber central wafer handling systems having all of the following:
1. Interfaces for wafer input and output, to which more than two functionally different 'semiconductor process tools' specified in 3.B.1.a.1., 3.B.1.a.2., 3.B.1.a.3. or 3.B.1.b. are designed to be connected; and
2. Designed to form an integrated system in a vacuum environment for 'sequential multiple wafer processing';
Note 3.B.1.e. does not apply to automatic robotic wafer handling systems specially designed for parallel wafer processing.
Technical Notes
1. For the purposes of 3.B.1.e.1., 'semiconductor process tools' refers to modular tools that provide physical processes for semiconductor "production" that are functionally different, such as deposition, implant or thermal processing.
2. For the purposes of 3.B.1.e.2., 'sequential multiple wafer processing' means the capability to process each wafer in different 'semiconductor process tools', such as by transferring each wafer from one tool to a second tool and on to a third tool with the automatic loading multi-chamber central wafer handling systems.
f. Lithography equipment as follows:
1. Align and expose step and repeat (direct step on wafer) or step and scan (scanner) equipment for wafer processing using photo-optical or X-ray methods and having any of the following:
a. A light source wavelength shorter than 193 nm; or
b. Capable of producing a pattern with a 'Minimum Resolvable Feature size' (MRF) of 45 nm or less;
Technical Note
For the purposes of 3.B.1.f.1.b., the 'Minimum Resolvable Feature size' (MRF) is calculated by the following formula:
--------- -------------------------------------------------------------
MRF = (an exposure light source wavelength in nm) x (K factor)
numerical aperture
--------- -------------------------------------------------------------
where the K factor = 0.35.
f. 2. Imprint lithography equipment capable of producing features of 45 nm or less;
Note 3.B.1.f.2. includes:
- Micro contact printing tools;
- Hot embossing tools;
- Nano-imprint lithography tools;
- Step and Flash Imprint Lithography (S-FIL) tools.
f. 3. Equipment specially designed for mask making having all of the following:
a. A deflected focused electron beam, ion beam or "laser" beam; and
b. Having any of the following:
1. A Full-Width Half-Maximum (FWHM) spot size smaller than 65 nm and an image placement less than 17 nm (mean + 3 sigma); or
2. Not used since 2015
3. A second-layer overlay error of less than 23 nm (mean + 3 sigma) on the mask;
f. 4. Equipment designed for device processing using direct writing methods, having all of the following:
a. A deflected focused electron beam; and
b. Having any of the following:
1. A minimum beam size equal to or smaller than 15 nm; or
2. An overlay error less than 27 nm (mean + 3 sigma);
g. Masks and reticles, designed for integrated circuits specified in 3.A.1.;
h. Multi-layer masks with a phase shift layer not specified in 3.B.1.g. and designed to be used by lithography equipment having a light source wavelength less than 245 nm;
Note 3.B.1.h. does not apply to multi-layer masks with a phase shift layer designed for the fabrication of memory devices not specified in 3.A.1.
N.B. For masks and reticles, specially designed for optical sensors, see 6.B.2.
i. Imprint lithography templates designed for integrated circuits specified in 3.A.1.;
j. Mask "substrate blanks" with multilayer reflector structure consisting of molybdenum and silicon, and having all of the following:
1. Specially designed for 'Extreme Ultraviolet' ('EUV') lithography; and
2. Compliant with SEMI Standard P37.
Technical Note
For the purposes of 3.B.1.j., 'Extreme Ultraviolet' ('EUV') refers to electromagnetic spectrum wavelengths greater than 5 nm and less than 124 nm.