- List
- EU dual-use list – Annex I to Regulation (EU) 2021/821, updated annually
- Originating regime
- Thỏa ước Wassenaar
a. "Technology" according to the General Technology Note for the "development", "production" or "use" (excluding operation) of equipment, functions or features specified in 5A001 or "software" specified in 5D001.a. or 5D001.e.;
b. Specific "technology" as follows:
1. "Technology" "required" for the "development" or "production" of telecommunications equipment specially designed to be used on board "spacecraft";
2. "Technology" for the "development" or "use" of "laser" communication techniques with the capability of automatically acquiring and tracking signals and maintaining communications through exoatmosphere or sub-surface (water) media;
3. "Technology" for the "development" of digital cellular radio base station receiving equipment whose reception capabilities that allow multi-band, multi-channel, multi-mode, multi-coding algorithm or multi-protocol operation can be modified by changes in "software";
4. "Technology" for the "development" of "spread spectrum" techniques, including "frequency hopping" techniques;
Note:
5E001.b.4. does not control "technology" for the "development" of any of the following:
a. Civil cellular radio-communications systems;
or
b. Fixed or mobile satellite earth stations for commercial civil telecommunications.
c. "Technology" according to the General Technology Note for the "development" or "production" of any of the following:
1. Not used;
2. Equipment employing a "laser" and having any of the following:
a. A transmission wavelength exceeding 1 750 nm; or
b. Not used;
c. Not used;
d. Employing wavelength division multiplexing techniques of optical carriers at less than 100 GHz spacing; or
e. Employing analogue techniques and having a bandwidth exceeding 2,5 GHz;
Note:
5E001.c.2.e. does not control "technology" for commercial TV systems.
N.B. For "technology" for the "development" or "production" of non-telecommunications equipment employing a laser, see 6E.
3. Equipment employing 'optical switching' and having a switching time less than 1 ms;
Technical Note:
For the purposes of 5E001.c.3., 'optical switching' is the routing of or switching of signals in optical form without conversion to electrical signals.
4. Radio equipment having any of the following:
a. Quadrature-Amplitude-Modulation (QAM) techniques above level 1 024 ;
b. Operating at input or output frequencies exceeding 31,8 GHz; or
Note:
5E001.c.4.b. does not control "technology" for equipment designed or modified for operation in any frequency band which is "allocated by the ITU" for radio-communications services, but not for radio-determination.
c. Operating in the 1,5 MHz to 87,5 MHz band and incorporating adaptive techniques providing more than 15 dB suppression of an interfering signal; or
5. Not used;
6. Mobile equipment having all of the following:
a. Operating at an optical wavelength greater than or equal to 200 nm and less than or equal to 400 nm; and
b. Operating as a "local area network";
d. "Technology" according to the General Technology Note for the "development" or "production" of "Monolithic Microwave Integrated Circuit" ("MMIC") amplifiers specially designed for telecommunications and that are any of the following:
Technical Note:
For the purposes of 5E001.d., the parameter peak saturated power output may also be referred to on product data sheets as output power, saturated power output, maximum power output, peak power output, or peak envelope power output.
1. Rated for operation at frequencies exceeding 2,7 GHz up to and including 6,8 GHz with a "fractional bandwidth" greater than 15 %, and having any of the following:
a. A peak saturated power output greater than 75 W (48,75 dBm) at any frequency exceeding 2,7 GHz up to and including 2,9 GHz;
b. A peak saturated power output greater than 55 W (47,4 dBm) at any frequency exceeding 2,9 GHz up to and including 3,2 GHz;
c. A peak saturated power output greater than 40 W (46 dBm) at any frequency exceeding 3,2 GHz up to and including 3,7 GHz; or
d. A peak saturated power output greater than 20 W (43 dBm) at any frequency exceeding 3,7 GHz up to and including 6,8 GHz;
2. Rated for operation at frequencies exceeding 6,8 GHz up to and including 16 GHz with a "fractional bandwidth" greater than 10 %, and having any of the following:
a. A peak saturated power output greater than 10W (40 dBm) at any frequency exceeding 6,8 GHz up to and including 8,5 GHz; or
b. A peak saturated power output greater than 5W (37 dBm) at any frequency exceeding 8,5 GHz up to and including 16 GHz;
3. Rated for operation with a peak saturated power output greater than 3 W (34,77 dBm) at any frequency exceeding 16 GHz up to and including 31,8 GHz, and with a "fractional bandwidth" of greater than 10 %;
4. Rated for operation with a peak saturated power output greater than 0,1 nW (-70 dBm) at any frequency exceeding 31,8 GHz up to and including 37 GHz;
5. Rated for operation with a peak saturated power output greater than 1 W (30 dBm) at any frequency exceeding 37 GHz up to and including 43,5 GHz, and with a "fractional bandwidth" of greater than 10 %;
6. Rated for operation with a peak saturated power output greater than 31,62 mW (15 dBm) at any frequency exceeding 43,5 GHz up to and including 75 GHz, and with a "fractional bandwidth" of greater than 10 %;
7. Rated for operation with a peak saturated power output greater than 10 mW (10 dBm) at any frequency exceeding 75 GHz up to and including 90 GHz, and with a "fractional bandwidth" of greater than 5 %; or
8. Rated for operation with a peak saturated power output greater than 0,1 nW (-70 dBm) at any frequency exceeding 90 GHz;
e. "Technology" according to the General Technology Note for the "development" or "production" of electronic devices and circuits, specially designed for telecommunications and containing components manufactured from "superconductive" materials, specially designed for operation at temperatures below the "critical temperature" of at least one of the "superconductive" constituents and having any of the following:
1. Current switching for digital circuits using "superconductive" gates with a product of delay time per gate (in seconds) and power dissipation per gate (in watts) of less than 10-14 J; or
2. Frequency selection at all frequencies using resonant circuits with Q-values exceeding 10 000 .
b. Specific "technology" as follows:
1. "Technology" "required" for the "development" or "production" of telecommunications equipment specially designed to be used on board "spacecraft";
2. "Technology" for the "development" or "use" of "laser" communication techniques with the capability of automatically acquiring and tracking signals and maintaining communications through exoatmosphere or sub-surface (water) media;
3. "Technology" for the "development" of digital cellular radio base station receiving equipment whose reception capabilities that allow multi-band, multi-channel, multi-mode, multi-coding algorithm or multi-protocol operation can be modified by changes in "software";
4. "Technology" for the "development" of "spread spectrum" techniques, including "frequency hopping" techniques;
Note:
5E001.b.4. does not control "technology" for the "development" of any of the following:
a. Civil cellular radio-communications systems;
or
b. Fixed or mobile satellite earth stations for commercial civil telecommunications.
c. "Technology" according to the General Technology Note for the "development" or "production" of any of the following:
1. Not used;
2. Equipment employing a "laser" and having any of the following:
a. A transmission wavelength exceeding 1 750 nm; or
b. Not used;
c. Not used;
d. Employing wavelength division multiplexing techniques of optical carriers at less than 100 GHz spacing; or
e. Employing analogue techniques and having a bandwidth exceeding 2,5 GHz;
Note:
5E001.c.2.e. does not control "technology" for commercial TV systems.
N.B. For "technology" for the "development" or "production" of non-telecommunications equipment employing a laser, see 6E.
3. Equipment employing 'optical switching' and having a switching time less than 1 ms;
Technical Note:
For the purposes of 5E001.c.3., 'optical switching' is the routing of or switching of signals in optical form without conversion to electrical signals.
4. Radio equipment having any of the following:
a. Quadrature-Amplitude-Modulation (QAM) techniques above level 1 024 ;
b. Operating at input or output frequencies exceeding 31,8 GHz; or
Note:
5E001.c.4.b. does not control "technology" for equipment designed or modified for operation in any frequency band which is "allocated by the ITU" for radio-communications services, but not for radio-determination.
c. Operating in the 1,5 MHz to 87,5 MHz band and incorporating adaptive techniques providing more than 15 dB suppression of an interfering signal; or
5. Not used;
6. Mobile equipment having all of the following:
a. Operating at an optical wavelength greater than or equal to 200 nm and less than or equal to 400 nm; and
b. Operating as a "local area network";
d. "Technology" according to the General Technology Note for the "development" or "production" of "Monolithic Microwave Integrated Circuit" ("MMIC") amplifiers specially designed for telecommunications and that are any of the following:
Technical Note:
For the purposes of 5E001.d., the parameter peak saturated power output may also be referred to on product data sheets as output power, saturated power output, maximum power output, peak power output, or peak envelope power output.
1. Rated for operation at frequencies exceeding 2,7 GHz up to and including 6,8 GHz with a "fractional bandwidth" greater than 15 %, and having any of the following:
a. A peak saturated power output greater than 75 W (48,75 dBm) at any frequency exceeding 2,7 GHz up to and including 2,9 GHz;
b. A peak saturated power output greater than 55 W (47,4 dBm) at any frequency exceeding 2,9 GHz up to and including 3,2 GHz;
c. A peak saturated power output greater than 40 W (46 dBm) at any frequency exceeding 3,2 GHz up to and including 3,7 GHz; or
d. A peak saturated power output greater than 20 W (43 dBm) at any frequency exceeding 3,7 GHz up to and including 6,8 GHz;
2. Rated for operation at frequencies exceeding 6,8 GHz up to and including 16 GHz with a "fractional bandwidth" greater than 10 %, and having any of the following:
a. A peak saturated power output greater than 10W (40 dBm) at any frequency exceeding 6,8 GHz up to and including 8,5 GHz; or
b. A peak saturated power output greater than 5W (37 dBm) at any frequency exceeding 8,5 GHz up to and including 16 GHz;
3. Rated for operation with a peak saturated power output greater than 3 W (34,77 dBm) at any frequency exceeding 16 GHz up to and including 31,8 GHz, and with a "fractional bandwidth" of greater than 10 %;
4. Rated for operation with a peak saturated power output greater than 0,1 nW (-70 dBm) at any frequency exceeding 31,8 GHz up to and including 37 GHz;
5. Rated for operation with a peak saturated power output greater than 1 W (30 dBm) at any frequency exceeding 37 GHz up to and including 43,5 GHz, and with a "fractional bandwidth" of greater than 10 %;
6. Rated for operation with a peak saturated power output greater than 31,62 mW (15 dBm) at any frequency exceeding 43,5 GHz up to and including 75 GHz, and with a "fractional bandwidth" of greater than 10 %;
7. Rated for operation with a peak saturated power output greater than 10 mW (10 dBm) at any frequency exceeding 75 GHz up to and including 90 GHz, and with a "fractional bandwidth" of greater than 5 %; or
8. Rated for operation with a peak saturated power output greater than 0,1 nW (-70 dBm) at any frequency exceeding 90 GHz;
e. "Technology" according to the General Technology Note for the "development" or "production" of electronic devices and circuits, specially designed for telecommunications and containing components manufactured from "superconductive" materials, specially designed for operation at temperatures below the "critical temperature" of at least one of the "superconductive" constituents and having any of the following:
1. Current switching for digital circuits using "superconductive" gates with a product of delay time per gate (in seconds) and power dissipation per gate (in watts) of less than 10-14 J; or
2. Frequency selection at all frequencies using resonant circuits with Q-values exceeding 10 000 .