- List
- Wassenaar Arrangement – List of Dual-Use Goods and Technologies – WA-LIST (25) 1
- Corresponding EU entry
- 6C004
a. Zinc selenide (ZnSe) and zinc sulphide (ZnS) "substrate blanks", produced by the Chemical Vapour Deposition (CVD) process and having any of the following:
1. A volume greater than 100 cm³; or
2. A diameter greater than 80 mm and a thickness of 20 mm or more;
b. Electro-optic materials and non-linear optical materials, as follows:
1. Potassium titanyl arsenate (KTA) (CAS 59400-80-5);
2. Silver gallium selenide (AgGaSe₂, also known as AGSE)
(CAS 12002-67-4);
3. Thallium arsenic selenide (Tl₃AsSe₃, also known as TAS)
(CAS 16142-89-5);
4. Zinc germanium phosphide (ZnGeP₂, also known as ZGP,
zinc germanium biphosphide or zinc germanium diphosphide);
5. Gallium selenide (GaSe) (CAS 12024-11-2);
c. Non-linear optical materials, other than those specified in 6.C.4.b., having any of the following:
1. Having all of the following:
a. Dynamic (also known as non-stationary) third order non-linear susceptibility (⁽³⁾, chi 3) of 10⁻⁶m²/V² or more; and
b. Response time of less than 1 ms; or
2. Second order non-linear susceptibility (⁽²⁾, chi 2) of 3.310⁻¹¹ m/V or more;
d. "Substrate blanks" of silicon carbide or beryllium beryllium (Be/Be) deposited materials, exceeding 300 mm in diameter or major axis length;
e. Glass, including fused silica, phosphate glass, fluorophosphate glass, zirconium fluoride (ZrF₄) (CAS 7783-64-4) and hafnium fluoride (HfF₄) (CAS 13709-52-9) and having all of the following:
1. A hydroxyl ion (OH-) concentration of less than 5 ppm;
2. Integrated metallic purity levels of less than 1 ppm; and
3. High homogeneity (index of refraction variance) less than
5 x 10⁻⁶;
f. Synthetically produced diamond material with an absorption of less than
10⁻⁵ cm⁻¹ for wavelengths exceeding 200 nm but not exceeding 14,000 nm.
LASERS
1. A volume greater than 100 cm³; or
2. A diameter greater than 80 mm and a thickness of 20 mm or more;
b. Electro-optic materials and non-linear optical materials, as follows:
1. Potassium titanyl arsenate (KTA) (CAS 59400-80-5);
2. Silver gallium selenide (AgGaSe₂, also known as AGSE)
(CAS 12002-67-4);
3. Thallium arsenic selenide (Tl₃AsSe₃, also known as TAS)
(CAS 16142-89-5);
4. Zinc germanium phosphide (ZnGeP₂, also known as ZGP,
zinc germanium biphosphide or zinc germanium diphosphide);
5. Gallium selenide (GaSe) (CAS 12024-11-2);
c. Non-linear optical materials, other than those specified in 6.C.4.b., having any of the following:
1. Having all of the following:
a. Dynamic (also known as non-stationary) third order non-linear susceptibility (⁽³⁾, chi 3) of 10⁻⁶m²/V² or more; and
b. Response time of less than 1 ms; or
2. Second order non-linear susceptibility (⁽²⁾, chi 2) of 3.310⁻¹¹ m/V or more;
d. "Substrate blanks" of silicon carbide or beryllium beryllium (Be/Be) deposited materials, exceeding 300 mm in diameter or major axis length;
e. Glass, including fused silica, phosphate glass, fluorophosphate glass, zirconium fluoride (ZrF₄) (CAS 7783-64-4) and hafnium fluoride (HfF₄) (CAS 13709-52-9) and having all of the following:
1. A hydroxyl ion (OH-) concentration of less than 5 ppm;
2. Integrated metallic purity levels of less than 1 ppm; and
3. High homogeneity (index of refraction variance) less than
5 x 10⁻⁶;
f. Synthetically produced diamond material with an absorption of less than
10⁻⁵ cm⁻¹ for wavelengths exceeding 200 nm but not exceeding 14,000 nm.
LASERS